PHK12NQ10T,518
- Mfr.Part #
- PHK12NQ10T,518
- Manufacturer
- NXP Semiconductors
- Package/Case
- Datasheet
-
PHK12NQ10T,518
- Description
- MOSFET N-CH 100V 11.6A 8SO
- Stock
- 35000
- Quality
-
- Social media
-
- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 11.6A (Tc)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 35 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1965 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Power Dissipation (Max) :
- 8.9W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 28mOhm @ 6A, 10V
- Supplier Device Package :
- 8-SO
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Datasheets
- PHK12NQ10T,518
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| Express Delivery | Global delivery 3-5 working days. |  |  |
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